Price Trend
NAND Index
DRAM Index
Stock Information
Update: 10-17 12:51 ,Data has delay
Samsung
KRW
97900
+0.20%
SK Hynix
KRW
465000
+2.76%
KIOXIA
JPY
6720
-2.33%
Micron
USD
202.530
+5.52%
WDC
USD
125.920
+4.55%
SanDisk
USD
144.270
-0.02%
Nanya
TWD
104.0
+9.59%
Winbond
TWD
44.15
+0.34%
Phison
TWD
850
-1.16%
SMI
USD
92.360
-0.31%
Maxio
CNY
57.79
-2.18%
ASolid
TWD
83.5
-2.91%
Longsys
CNY
179.80
-1.01%
Seagate
USD
226.030
+3.03%
Innodisk
TWD
412.0
-3.74%
Transcend
TWD
134.0
-3.94%
A-DATA
TWD
188.0
-0.27%
PENG
USD
22.490
-0.71%
Netac
CNY
28.35
-3.96%
BWCC
CNY
108.04
-4.85%
Techwinsemi
CNY
185.54
-5.56%
DAWEI
CNY
20.52
-1.72%
OSE
TWD
46.85
-1.68%
PTI
TWD
154.0
-1.28%
JCET
CNY
40.12
-3.84%
ASE
TWD
195.5
+2.09%
TFME
CNY
39.62
-7.47%
HT-tech
CNY
12.96
+10.02%
Hot news
Samsung Electronics Targets 3.25TB/s for HBM4E by 2027 25/10/15
Samsung Electronics presented a target pin speed of over 13Gbps for HBM4E, which is under development for 2027. HBM4E has 2,048 pins for data transfer, which translates to 3.25TB/s when converted to bytes (1 byte equals 8 bits). Simultaneously, Samsung Electronics stated that the power efficiency of HBM4E would be more than twice that of the current HBM3E, which is 3.9 picojoules (pJ) per bit.
Flash Wafer
Last update:25/10/17 11:00 GMT+8
DDR
Last update:25/10/14 11:00 GMT+8
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