Price Trend
NAND Index
DRAM Index
Stock Information
Update: 10-18 04:29 ,Data has delay
Samsung
KRW
97900
+0.20%
SK Hynix
KRW
465500
+2.87%
KIOXIA
JPY
6560
-4.65%
Micron
USD
202.380
-0.07%
WDC
USD
126.200
+0.22%
SanDisk
USD
140.160
-2.85%
Nanya
TWD
104.0
+9.59%
Winbond
TWD
43.95
-0.11%
Phison
TWD
850
-1.16%
SMI
USD
94.140
+1.93%
Maxio
CNY
57.10
-3.35%
ASolid
TWD
83.7
-2.67%
Longsys
CNY
177.90
-2.05%
Seagate
USD
225.400
-0.28%
Innodisk
TWD
413.0
-3.50%
Transcend
TWD
133.0
-4.66%
A-DATA
TWD
188.0
-0.27%
PENG
USD
21.740
-3.33%
Netac
CNY
28.73
-2.68%
BWCC
CNY
104.40
-8.06%
Techwinsemi
CNY
183.03
-6.84%
DAWEI
CNY
20.28
-2.87%
OSE
TWD
46.80
-1.78%
PTI
TWD
153.5
-1.60%
JCET
CNY
39.50
-5.32%
ASE
TWD
196.0
+2.35%
TFME
CNY
38.77
-9.46%
HT-tech
CNY
12.96
+10.02%
Hot news
Samsung Electronics Targets 3.25TB/s for HBM4E by 2027 25/10/15
Samsung Electronics presented a target pin speed of over 13Gbps for HBM4E, which is under development for 2027. HBM4E has 2,048 pins for data transfer, which translates to 3.25TB/s when converted to bytes (1 byte equals 8 bits). Simultaneously, Samsung Electronics stated that the power efficiency of HBM4E would be more than twice that of the current HBM3E, which is 3.9 picojoules (pJ) per bit.
Flash Wafer
Last update:25/10/17 18:00 GMT+8
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