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Samsung launches dedicated HBM, advanced chip packaging teams  24/07/05
Samsung Electronics Co., has officially launched a team dedicated to developing advanced high-bandwidth (HBM) memory, a core chip to power artificial intelligence (AI) devices.
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Mo is used to improve the resistivity within the transistors, which allows more layers to be stacked in a NAND.
SK hynix Achieves 56% Yield in 3D DRAM  24/06/24
SK hynix reported that the manufacturing yield of the 3D DRAM, stacked in five layers, recorded 56.1%.
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2023-01-03
Samsung to build pilot lines at P4 and Taylor fab within year
2022-12-30
Notice of New Year's Day Holiday
2022-12-20
Notice of Adjusting the Quotation of DDR Products
2022-12-13
Notice of Adjusting the DDR Module Product Name
2022-11-11
SK hynix DDR5 & CXL Solutions Validated with AMD EPYC 9004 Series Processors
2022-09-30
Notice of National Day Holiday
2022-09-09
Notice of Mid-autumn Festival Holiday
2022-07-25
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2022-07-25
SK hynix plans to suspend construction of Cheongju plant
2022-06-16
Inventories of memory chips in Asia is too high, and Micron may be price for volume in the second half of the year
2022-06-16
SK hynix seeks to improve DRAM production efficiency: cooperates with Lam Research to improve dry lithography technology.
2022-06-08
Canalys: Total spending on cloud services in China reached $7.3 billion in the first quarter
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2022 Dragon Boat Festival Holiday Notice

 

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Update: 07-14 19:01,Data has delay
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Intel USD 34.490 +2.96%
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Phison TWD 595 -2.46%
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Marvell USD 73.590 +2.04%
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