According to a source in the semiconductor industry cited by South Korean media DDaily, SK Hynix will develop a specific plan for facility adjustments and equipment deployment to introduce the 1c DRAM process after optimizing the production line centered on HBM3E.

Reports indicate that SK Hynix is internally developing a process miniaturization strategy to increase the number of EUV (Extreme Ultraviolet) exposure layers during the transition phase of 1C DRAM production. The company is also considering readjusting equipment configurations to enhance the precision of core processes such as lithography, etching, and cleaning. This is interpreted as a partial reorganization of existing production lines, shifting focus toward HBM and high-performance server DRAM manufacturing, rather than simply expanding capacity.

The 1c DRAM process is a sixth-generation node at the 10nm level, capable of further reducing circuit linewidth and improving power efficiency. Compared to the existing 1b DRAM process, the 1c DRAM process is expected to enhance production yield and speed while reducing costs.

SK Hynix announced in August 2024 the successful development of 16Gb DDR5 DRAM using the sixth-generation 10-nanometer-class (1c) process. Currently, SK Hynix is making every effort to prepare for mass production. The industry widely believes that the combination of EUV multi-layer lithography and process simplification will be key to enhancing the competitiveness of the 1c DRAM process.