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Samsung Completes Development of Groundbreaking 400-layer NAND Technology  24/12/09
Samsung Electronics has successfully completed the development of its groundbreaking 400-layer NAND technology at its Semiconductor Research Institute.
SK Hynix beefs up executive team amid high number of promotions  24/12/06
Executive vice president Ahn Hyun was promoted to president and the new post of chief development officer (CDO).
Samsung succeeds in reducing use of PR during 3D NAND lithography  24/11/26
Starting with Samsung’s Gen 9 3D NAND, the tech giant will only use half the amount of PR than before, thanks to the spin rpm and etching condition adjustments, sources said.
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