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SK Hynix is reportedly planning to enhance the competitiveness of its 1C DRAM  25/11/06
According to a source in the semiconductor industry cited by South Korean media DDaily, SK Hynix will develop a specific plan for facility adjustments and equipment deployment to introduce the 1c DRAM process after optimizing the production line centered on HBM3E.
Samsung says next year’s HBM capacity already sold out  25/11/06
Samsung also said on Thursday that its HBM capacity for next year has already been sold out and it was receiving additional order requests.
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The PM9E1 is Samsung Electronics’ industry-leading PC SSD in terms of performance and capacity, with sequential read and write speeds of up to 14.5 gigabytes (GB) per second.
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2010-03-24
PSC sells Zentel shares
2010-03-24
DDR3 spot prices reach US$3
2010-03-24
Toshiba to build new NAND fab in Japan
2010-03-24
Nanya and others win patent suit brought by LSI
2010-03-24
Toshiba steps up NAND competition against Samsung
2010-03-23
SanDisk ships 32GB mobile memory card
2010-03-23
Micron says no plans to expand DRAM capacity for 2010
2010-03-19
DDR2 gains stronger momentum, says inSpectrum
2010-03-19
DRAM spot prices keep rising
2010-03-18
Memory backend firms likely to see sequential revenue growth in 2Q10
2010-03-18
Tablet, low-capacity SSD seen as boost to NAND flash market
2010-03-17
SDRAM prices rise on strong demand, says Etron chairman
2010-03-17
NOR flash prices set to rise, says Macronix president
2010-03-17
PC makers scared of DRAM shortage
2010-03-17
Walton to add capacity, employees in 2010 to satisfy DDR3 testing demand

 

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Update: 11-20 09:41,Data has delay
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