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Samsung launches dedicated HBM, advanced chip packaging teams　 24/07/05
Samsung Electronics Co., has officially launched a team dedicated to developing advanced high-bandwidth (HBM) memory, a core chip to power artificial intelligence (AI) devices.
Samsung applies molybdenum in Gen 9 V-NAND　 24/07/03
Mo is used to improve the resistivity within the transistors, which allows more layers to be stacked in a NAND.
SK hynix Achieves 56% Yield in 3D DRAM　 24/06/24
SK hynix reported that the manufacturing yield of the 3D DRAM, stacked in five layers, recorded 56.1%.
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