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Samsung Electronics presented a target pin speed of over 13Gbps for HBM4E, which is under development for 2027. HBM4E has 2,048 pins for data transfer, which translates to 3.25TB/s when converted to bytes (1 byte equals 8 bits). Simultaneously, Samsung Electronics stated that the power efficiency of HBM4E would be more than twice that of the current HBM3E, which is 3.9 picojoules (pJ) per bit.
Notice of National Day Holiday  25/09/30
Due to the National Day holiday, Chinaflashmarket will postpone market quotation from Oct. 1st to Oct. 8th , and all product quotations will resume on Oct. 9th.
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Notice of National Day Holiday

 

Price Trend
Stock Information
Update: 10-31 09:32,Data has delay
Samsung KRW 104500 +0.38%
SK Hynix KRW 561000 -1.23%
KIOXIA JPY 10840 -0.55%
Micron USD 224.010 -1.16%
WDC USD 138.130 -2.30%
SanDisk USD 195.820 -4.18%
Nanya TWD 130.5 -2.97%
Winbond TWD 54.2 -1.81%
Phison TWD 1060 -4.50%
SMI USD 99.960 -0.64%
Maxio CNY 59.16 -2.70%
ASolid TWD 77.1 -3.75%
Longsys CNY 265.11 -6.32%
Seagate USD 268.335 +1.02%
Innodisk TWD 427.5 -0.23%
Transcend TWD 130.5 -2.61%
A-DATA TWD 197.5 -0.75%
PENG USD 22.440 +0.22%
Netac CNY 31.59 -0.38%
BWCC CNY 134.50 -0.88%
Techwinsemi CNY 229.75 +1.62%
DAWEI CNY 25.76 -4.49%
OSE TWD 48.60 +0.83%
PTI TWD 180.5 +1.98%
JCET CNY 40.92 -1.63%
ASE TWD 245.0 +8.89%
TFME CNY 43.96 -1.61%
HT-tech CNY 12.13 -1.14%