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SK Hynix is reportedly planning to enhance the competitiveness of its 1C DRAM  25/11/06
According to a source in the semiconductor industry cited by South Korean media DDaily, SK Hynix will develop a specific plan for facility adjustments and equipment deployment to introduce the 1c DRAM process after optimizing the production line centered on HBM3E.
Samsung says next year’s HBM capacity already sold out  25/11/06
Samsung also said on Thursday that its HBM capacity for next year has already been sold out and it was receiving additional order requests.
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The PM9E1 is Samsung Electronics’ industry-leading PC SSD in terms of performance and capacity, with sequential read and write speeds of up to 14.5 gigabytes (GB) per second.
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2010-12-28
DRAM backend quotes for 1Q11 to fall 5-10%, says paper
2010-12-28
Commentary: Financially-strapped Taiwan DRAM makers have difficulties migrating to sub-20nm processes
2010-12-28
Nanya gains additional loans from affiliates, says paper
2010-12-24
Global smartphone sales to top 400-420 million units in 2011
2010-12-24
Shortage rumors boost DRAM, NAND flash spot markets
2010-12-23
Hard drives with 1TB platters to mature in 2011
2010-12-23
Intel, Microsoft may face strong challenge from ARM/Android
2010-12-23
Adlink considers SSD market
2010-12-22
Christmas demand boosts China exports
2010-12-22
Tablets to become major growth driver for NAND demand in 2011
2010-12-22
DRAM supply bit growth to top 58% in 2011
2010-12-21
TSMC 2011 spending on R&D to rise 39%
2010-12-21
Toshiba disposes of Phison shares
2010-12-21
Rexchip ramping up production for 2Gb DDR3
2010-12-20
New fab could be compatible with 18-inch production tools, says TSMC

 

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Update: 11-06 23:23,Data has delay
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Micron USD 238.460 +0.40%
WDC USD 164.760 +2.91%
SanDisk USD 211.555 -2.28%
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Phison TWD 1160 +6.91%
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