Samsung Electronics presented a target pin speed of over 13Gbps for HBM4E, which is under development for 2027. HBM4E has 2,048 pins for data transfer, which translates to 3.25TB/s when converted to bytes (1 byte equals 8 bits). Simultaneously, Samsung Electronics stated that the power efficiency of HBM4E would be more than twice that of the current HBM3E, which is 3.9 picojoules (pJ) per bit.
