Since there is little difference in production equipments between NAND Flash and DRAM, so the upstream chip manufacturers, usually swift the production line of DRAM and NAND Flash based on market demand and price.
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Memory Manufacturer
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DRAM Production line
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FLASH Production Line
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SAMSUNG
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YES 25nm
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YES 16nm
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SK HYNIX
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YES 29nm
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YES 16nm
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TOSHIBA/SANDISK
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NO
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YES 19nm
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|
MICRON
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YES 28nm
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YES 18nm
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KINGSTON
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YES PSC Production line 38nm
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NO
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Global Mobile DRAM major suppliers are Samsung, Elpida and SK Hynix. Elpida's production capacity needs to meet Micron’s pace on embedded storage eMCP applications in mobile phones, Samsung's output is mainly for its own smart phone demand. There was supply shortage in the market on Mobile DRAM, especially in 2013, when the smart phone market began to enter into quad-core mobile processor generations, the average embeded capacity of 1GB/2GB Mobile DRAM upgrades to 2GB/4GB and this situation doubled consumption capacity of Mobile DRAM. Meanwhile, the sales profit of Mobile DRAM is much higher than NAND Flash. Samsung, SK Hynix etc. tends to change the NAND Flash production lines into Mobile DRAM and the new DRAM output will come into the market in 2014.
2013 and 2013 DRAM manufacturers supply change:
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DRAM Manufacturer
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2013
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2014
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SAMSUNG
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Samsung embeded mobile DRAM capacity, which is 1GB in S3, was increased to 2GB for S4, also with the DRAM generation update to 25nm from 35nm. The capacity change increased inside Samsung DRAM demand and pushed Samsung to purchase from other manufacturers.
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The 25nm generation production capability is growing quickly while Samsung new S5 is still using 2GB embeded DRAM. In this way, Samsung has turn to the open market for the oversupply DRAM.
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SK HYNIX
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Flash generation updated from 36nm to 29nm, but the fire in China WUXI factory gave a heavy damage to their production capability.
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China WUXI factory production recovery and 29nm is in mass production stage.
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Nanya
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Nanya growd a lot due to other manufacturers shortage.
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Main produce LP DDR2 and PC DDR3, generation is still in 3X nm level.
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MICRON
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Micron DRAM production line and technology adjustment was transferred to ELPIDA in Japan, Rexchip in Taiwan,Inotera while USA and Singapore factory was focusing on NAND FLASH.
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ELPIDA is focusing on mobile DRAM with Taiwan factories concentrate on PC DRAM. Both NAND FLASH and DRAM production capability is in full usage.
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KINGSTON
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Took in chage of Powerchip PSC line and its 38nm 20K pcs production capability per month.
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No new investment, still focus on 38nm and 20K pcs per month.
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Update from 3Xnm to 2Xnm, single pcs wafer output increased aound 45%.In 2014, these above manufacturers have more price advantage in cost, but market might be in quick dropping if any change occurred due to over supply.
NAND Flash and DRAM comparison chart
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Manufacturer
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Nanya
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Samsung FLASH
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ELPIDA
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SK HYNIX
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|
Description
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NT5CB256M8GN
2Gb 256MB *8
|
K9ACGD8U0B
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3xnm 4Gb ECB440ABACN-Y
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29nm 4Gb
256MB *16
|
|
Wafer Size(mm)
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8.150*6.42
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11.625*6.614
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10.46*7.10
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7.37*6.25
|
|
Generation
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35nm
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19nm
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36nm
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29nm
|
|
Die Qty
|
1220
|
804
|
859
|
1412
|
|
Single Die cost based on 90% yield rate
USD1500
|
USD1.366
|
USD2.07
|
USD1.94
|
USD1.18
|
|
Single die market price
|
USD1.7
|
USD2
|
USD3.2
|
USD3.2
|
|
Total wafer cost based on 90% yield rate
|
USD1866
|
USD1447
|
USD2474
|
USD4066
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From this chart, it is clear Samsung 19nm Nand flash wafer selling price is under 1500USD while 2Xnm DRAM is still on USB4000 level. USD1500= depreciation cost of machinery+ gross profit+material cost. This means after these three-month dropping, NAND FLASH price will be in a stable stage while DRAM is still keep high margin and will varies based on continious supply side output and weak market demand. | 