Samsung Electronics has conducted an organizational restructuring, dissolving the High Bandwidth Memory (HBM) development team that was established last year and reorganizing it under the DRAM development division.

According to the industry on Nov. 27, Samsung Electronics held a briefing for executives on this day and announced the organizational restructuring.

During this organizational restructuring, Samsung Electronics' DS Division has established a "Memory Development Department" that will centrally oversee both the DRAM Development Office and the NAND Flash Development Office, which were previously under the Memory Business Division.

EVP Sang-Jun Hwang, who previously led the DRAM Development Office, will head the new Memory Development Department. Having spearheaded the development of high-value-added DRAM and High Bandwidth Memory (HBM), he will also concurrently serve as the head of the DRAM Development Office and be responsible for memory development-related matters.

This move is interpreted as aiming to enhance memory development efficiency, aligning with the accelerating trend of technological convergence between DRAM and NAND Flash. The industry is currently focused on developing hybrid memory solutions to improve the performance of next-generation semiconductors.

In the DS division, which is responsible for the semiconductor business, the HBM development team disappeared and related personnel were moved to design team organizations under the DRAM development division. Executive Vice President Son Young-soo, who previously led the HBM development team, was appointed as the design team leader.

The HBM development team personnel are expected to continue developing next-generation HBM products and technologies such as HBM4 and HBM4E under the design team.

This is interpreted as confidence that Samsung has secured considerable technological capabilities in next-generation HBM products such as HBM4.