According to industry sources cited by South Korean media, Samsung Electronics has determined the investment direction for the first production line in the Pingze Fourth Park (P4), recently changed the name of the production line, and started preparing for simultaneous mass production of NAND and DRAM.

It is reported that Samsung Electronics changed the name of the P4 Phase (Ph) 1 line from P4F to P4H in the third quarter of last year.

F is a term representing Nand Flash. H is the abbreviation for Hybrid. This means that PH1 is no longer a production line that only produces NAND, but also simultaneously produces NAND and DRAM.

Specifically, in the P4H production line, it has been determined that the monthly production scale for NAND is 10000 pieces. We have already started production of 5000 pieces per month in the middle of this year, and plan to add another 5000 pieces per month by the end of the year.

The direction of additional investment is expected to be announced around mid next year. The mass production preparation for new generation NAND such as QLC (four layer cell) V9 NAND has been completed, but the plan has been postponed due to uncertain market conditions.

In terms of DRAM, Samsung Electronics plans to produce 1a (fifth generation 10 nanometer level) and 1b (sixth generation 10 nanometer level) DRAM. Currently, Samsung Electronics is investing in converting its existing mature process DRAM in its Pingze campus into 1a, 1b, etc., including P1, P2, and P3. It is expected that P4H will take on the role of manufacturing some of these DRAM processes.

Therefore, the production capacity of DRAM in P4H is expected to be at least 30000 to 40000 pieces per month.