SK Hynix will be providing samples of its Gen 5 high-bandwidth memory (HBM), or HBM3E 16H, in early 2025.

Kwak Noh-jung, the CEO of SK Hynix said during a local press event hosted by SK Group that the HBM3E 16H, which stacks 16 DRAM dies, will continue to use mass reflow molded underfill (MR-MUF) packaging while the company was also developing a hybrid bonding process as a back-up process.

MR-MUF fills in the gaps between the DRAM dies with an epoxy molding compound, a technique developed by SK Hynix.

Kwak also said that the company will push Gen 6 HBM, or HBM4, in 12 stacks and 16 stacks as their main products.

On HBM3E 16H, the CEO said the chip offers 18% increase in learning and 32% jump in inference capabilities compared to 12H. HBM3E 16 will also offer 48GB capacity, he added.

Meanwhile, SK Hynix was also developing LPDDR5 and LPDDR6 based on its 1c-nanometer process node as well as LPCAMM2, Kwak said.

In NAND, the company was preparing for PCIe 6 solid-state drives and embedded SSDs based on quad-level cells as well as UFS 5.0, the latest JEDEC standard for flash memory, the CEO added.