Samsung Electronics, led by Jungbae Lee, President and General Manager of the DS Division's Memory Business, has revealed its development roadmap for upcoming memory products. According to the roadmap, the company is targeting the release of DDR memory utilizing 1c nm process technology in 2024, which will offer products with a 32Gb chip capacity. This will be succeeded in 2026 by the last generation of 10nm-class 1d nm DDR memory, also providing a maximum chip capacity of 32Gb.

Looking ahead to 2027, Samsung Electronics will step into the sub-10nm DRAM process node with the introduction of 0a nm process DDR memory products, which will significantly boost the single chip capacity to 48Gb, or 6GB. Additionally, Samsung introduced the LPDDR5-PIM product, a storage medium integrated with a computing unit, designed to markedly enhance system energy efficiency and performance.

In the HBM memory sector, Samsung Electronics has also confirmed that its next-generation product, HBM4E, will be launched in 2026, aligning with the pace of competitor SK Hynix. With the introduction of these advanced technologies, Samsung Electronics is expected to further solidify its leadership position in the memory sector, while also bringing new growth momentum to the entire semiconductor industry.