Micron Technology has reached a significant milestone with the commencement of mass production for its 12-layer stacked 36GB HBM3E memory. The company has begun shipping the new memory to major industry partners for validation within AI ecosystems. According to CFM Flash Memory Market, SK Hynix is expected to start mass production of its 12-layer HBM3E by the end of September, while Samsung has completed the production readiness of its 12-layer HBM3E chips and plans to begin supply in the second half of this year.

Compared to the existing 8-layer stacked HBM3E products, Micron's 12-layer stacked HBM3E boasts a 50% increase in capacity, enabling the execution of large AI models, such as Llama-70B, on a single processor and reducing the latency associated with multi-processor operations. The memory also features an I/O pin rate of over 9.2Gb/s and a memory bandwidth exceeding 1.2TB/s, with lower power consumption than its competitors' 8-layer stacked HBM3E products.

In Micron's financial report for the third quarter of fiscal year 2024 (March to May 2024), the company disclosed that its HBM shipments began to increase from the third quarter. It anticipates revenues in the hundreds of millions of dollars from HBM in fiscal year 2024 and revenues in the billions of dollars in fiscal year 2025. Micron expects its HBM to reach a market share level similar to its DRAM market share by the 2025 calendar year, which is approximately 20-25%. Additionally, Micron's HBM products for 2024 and 2025 are sold out, with the majority of 2025 products already having pricing contracts in place. Regarding HBM4, Micron has also begun development efforts, considering technologies including hybrid bonding.