In a recent report from a South Korean media outlet, Samsung Electronics has begun testing TEL's novel "Acrevia" equipment, a GCB device that employs ion beams to perform local area planarization on wafers. TEL has highlighted that the Acrevia equipment can enhance the line edge roughness (LER) and pattern defects within EUV processes. Industry insiders suggest that this equipment could shorten processes and improve pattern quality, making it a significant contender in the market.

The Acrevia device is likened to Applied Materials' "Centura Sculpta" equipment, which is also currently under testing at Samsung with the aim of future mass production application. The device's ability to form patterns by irradiating ion beams is seen as a key feature, as it allows circuits that require EUV multi-patterning to be carved with a single pattern. Additionally, it can eliminate random errors that occur during EUV patterning, which are responsible for up to 50% of EUV patterning errors.

A TEL executive has stated that their clients are testing the equipment, with expectations that it will first be applied to foundry processes rather than memory processes. As the new equipment from TEL garners positive reviews, the market for EUV pattern improvement equipment is anticipated to shift. Currently, Applied Materials holds a dominant position in this market, having strengthened its lead by supplying its Centura Sculpta to companies such as Samsung Electronics and Intel. In April last year, Applied Materials announced that it was testing the Centura Sculpta equipment on Samsung's 4-nanometer process, which also improves pattern errors on wafers through ion beam irradiation. It is understood that the bridge defect removal function is being tested for 2nm processes.

According to insights from CFM Flash Memory Market, Samsung and SK Hynix have introduced EUV equipment at the 1a and 1b nm technology nodes and are set to launch 1c nm DRAM this year, increasing the use of EUV technology. Meanwhile, Micron is planning to first introduce EUV technology at the 1γnm node and aims for mass production by 2025.