SK Hynix has achieved a milestone in semiconductor technology by successfully developing the industry's first 16Gb DDR5 DRAM based on the 6th generation 10nm-class (1c) process. This new development showcases the company's prowess in ultra-microfabrication storage technology and sets the stage for future advancements in high-performance computing.

The company has built upon its recognized high-performance 5th generation (1b) technology to enhance the design completeness and push the technological boundaries. With the new 1c DDR5 DRAM, SK Hynix is set to complete mass production preparations by the end of this year, aiming to supply products from the next year, thereby leading the development of the semiconductor memory market.

The 1c process was developed by expanding the 1b DRAM platform, which is expected to reduce the trial and error associated with process scaling while effectively transferring the advantages of the acclaimed 1b process to the new generation.

Innovative design techniques and the application of new materials in some EUV processes have been optimized throughout the 1c process, ensuring cost competitiveness. The production efficiency of the 1c process has improved by more than 30% compared to the previous 1b process.

The new 1c DDR5 DRAM is targeted at high-performance data centers, operating at a speed of 8Gbps, an 11% increase in speed over the previous generation. Additionally, energy efficiency has been enhanced by over 9%. As the AI era progresses and data center power consumption continues to rise, SK Hynix predicts that global customers operating cloud services could reduce their electricity costs by up to 30% by adopting the new 1c DRAM in their data centers.