Industry sources, as reported by South Korean media, have verified that Samsung Electronics is preparing to bring DRAM processing equipment to its P4 facility. The construction of the production line has been initiated with the goal of starting operations by June of next year to produce the 6th generation 1c process DRAM.

The 1c DRAM is currently not commercialized, but both Samsung Electronics and SK Hynix are actively preparing for mass production. Samsung plans to start producing 1c DRAM by the end of this year.

Furthermore, reports indicate that Samsung Electronics is considering using 1c DRAM for HBM4 (6th generation High Bandwidth Memory), with shipments expected to commence in the second half of next year. As a result, the P4 facility could potentially become the forefront of next-generation HBM production.

The P4 facility is expected to become a core part of Samsung Electronics' DRAM production. In terms of NAND, the demand has significantly increased with the proliferation of artificial intelligence, especially for eSSDs as a representative storage medium. Currently, the main NAND production plants are operating at full capacity, and additional production capacity is anticipated to be achieved through the P4 facility in Pyeongtaek.