Micron announced it is now sampling its multiplexed rank dual inline memory module (MRDIMMs). The MRDIMMs will enable Micron customers to run increasingly demanding workloads and obtain maximum value out of their compute infrastructure. For applications requiring more than 128GB of memory per DIMM slot, Micron MRDIMMs outperform current TSV RDIMMs by enabling the highest bandwidth, largest capacity with the lowest latency and improved performance per watt to accelerate memory-intensive virtualized multi-tenant, HPC and AI data center workloads.The new memory offering is the first generation in the Micron MRDIMM family and will be compatible with Intel® Xeon® 6 processors.  

By implementing DDR5 physical and electrical standards, MRDIMM technology delivers a memory advancement that allows scaling of both bandwidth and capacity per core to future-proof compute systems and meets the expanding demands of data center workloads. MRDIMMs provide the following advantages over RDIMMs: 

Up to 39% increase in effective memory bandwidth
Greater than 15% better bus efficiency
Up to 40% latency improvements compared to RDIMMs

MRDIMMs support a wide capacity range from 32GB to 256GB in standard and tall form factors (TFF), which are suitable for high-performance 1U and 2U servers. The improved thermal design of TFF modules reduces DRAM temperatures by up to 20 degrees Celsius at the same power and airflow,enabling more efficient cooling capabilities in data centers and optimizing total system task energy for memory-intensive workloads. Micron’s industry-leading memory design and process technology using 32Gb DRAM die enables 256GB TFF MRDIMMs to have the same power envelope as 128GB TFF MRDIMMs using 16Gb die. A 256GB TFF MRDIMM provides a 35% improvement in performance over similar-capacity TSV RDIMMs at the maximum data rate.5 With 256GB TFF MRDIMMs, data centers can drive unprecedented TCO benefits over TSV RDIMMs.