August 3, NE894M13-A Suppliers,Samsung announced Tuesday that they have acquired MRAM (magnetic random access memory) chip developers Grandis. Specific terms of the agreement were not disclosed.
Samsung said, Grandis will be incorporated into Samsung’s R & D department, focused on next generation memory technology development, evaluation of new semiconductor materials and structures of long-term commercial value. Samsung said the Grandis will contribute to its development of storage technology, Samsung’s global R & D network and will become a key part.
Grandis was established in 2002, develops SST-RAM (Spin Transfer Torque Random Access Memory) memory chip technology, which reportedly combines the cost advantages of DRAM, SRAM and fast read performance, easy-volatile flash memory.
June 2010, Grandis upgrade its product roadmap, plans for its next-generation MRAM chips to replace DRAM, NAND flash memory and eventually replaced. SST-RAM for the second-generation MRAM technology, which can be solved in part by the problems caused by conventional MRAM structure.
Over the years, MRAM and next-generation storage technology developer has indicated that the development of technology will eventually replace the current storage technology, but until now, DRAM and NAND is still the mainstream memory technology, has not been replaced.