Micron Technology has announced that early engineering samples are available for its third-generation reduced latency DRAM (RLDRAM 3 memory), a high-bandwidth memory technology that enables a more efficient transfer of information across the network.
Designed for high-performance networking applications including high-end routers and switches that require back-to-back read/write operations or completely random access, RLDRAM 3 memory is an ideal choice for 40 Gigabit Ethernet (GbE) and 100 GbE designs, packet buffering and inspection, and lookup tables, according to Micron.
RLDRAM 3 memory provides sustainable data rates up to 2133 megabits per second (Mb/s) and offers the industry's lowest random access latency of sub-10 nanoseconds, said Micron. It also offers greater energy efficiency through familiar 1.2V IO and 1.35V core voltage levels, the company added.
Micron said it is expected to begin production of RLDRAM 3 memory during the second half of 2011.
"At Micron, we recognize the pressure customers face today to optimize their network technology to support the growth in data volume and deal with the associated complexity of the changing infrastructure," said Bruce Franklin, director of Networking and Storage Business Development for Micron's DRAM Solutions Group. "RLDRAM 3 memory is a low-latency, high-bandwidth solution that provides plenty of headroom to accommodate our customers' evolving networking memory requirements."
Micron also announced that Integrated Silicon Solution (ISSI) will become an alternate supplier of Micron's RLDRAM 3 memory, providing assurance of commercial volume and longevity for networking customers.