Toshiba Electronics Europe has expanded its family of 24nm flash single-level cell (SLC) memory with a new device that offers a capacity of 16Gbits (Gb) in an industry-standard 48-pin TSOP package.

The new addition to the range means that designers can now take advantage of the price/performance of the company’s advanced 24nm NAND flash SLC technology at all capacity points from 1Gb to 128Gb.

As with other members of the family, the new device offers a combination of high read/write performance, effective write endurance (using 8-bit BCH ECC), and extended temperature operation. This makes it suitable for a variety of commercial and industrial applications.

Toshiba’s commitment to supporting the 24nm SLC flash technology also provides industrial designers with the confidence of choosing the technology for applications requiring production longevity.

The new device is based around 4 x 4Gb die and operates from a 2.7V to 3.3V power supply. Operating temperature range is from -40°C to 85°C.